Pure spin current injection of single-layer monochalcogenides

Abstract We compute the spectrum of pure spin current injection in ferroelectric single-layer SnS, SnSe, GeS, and GeSe. The formalism takes into account coherent dynamics optically excited conduction states split energy by spin–orbit coupling. velocity electron’s spins is calculated as a function incoming photon angle linearly polarized light within full electronic band structure scheme using density functional theory. find peak speeds 520, 360, 270 370 Km s ?1 for GeS GeSe, respectively which are an order magnitude larger than those found bulk semiconductors, e.g., GaAs CdSe. Interestingly, almost independent direction polarization range energies. Our results demonstrate that GeSe candidates to produce on demand spin-current spintronics applications.